Correlational switching between 3 × 1 and 6 × 1 surface reconstructions on Si(111) with submonolayer Ag adsorption

Physica B: Condensed Matter

Volumn 230-232, Issue , 1997, Pages 800-802

  Kempa, K ^a   Broido, D A ^a   Weitering, H H ^b,c  

^a BOSTON COLLEGE   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Correlational switching; Silicon; Surface reconstruction; Ultrafast computing

Indexed keywords

ADSORPTION; ELECTRONS; ELECTROSTATICS; PHASE TRANSITIONS; SILVER; SURFACE STRUCTURE;

CORRELATIONAL SWITCHING; SURFACE RECONSTRUCTION; ULTRAFAST COMPUTING;

SEMICONDUCTING SILICON;

EID: 4244127202     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(96)00844-7     Document Type: Article

References (7)

1. J.M. Carpinelli and H.H. Weitering, Surf. Sci. 331-333, (1995) 1015.
2. H.H. Weitering, N.J. DiNardo, R. Perez-Sandoz, J. Chen and E.J. Mele, Phys. Rev. B 49 (1994) 16837.
3. S. Suhai, Phys. Rev. B 52 (1995) 1674.
4. G. Koenig and G. Stollhoff, Phys. Rev. Lett. 65 (1990) 1239.
5. S.C. Erwin, Phys. Rev. Lett. 75 (1995) 1973.
6. N.E. Christensen, Phys. Stat. Sol. 31 (1969) 635.
7. F. Bolton, PhD Thesis (1994).