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Volumn 281-282, Issue 1-2, 1996, Pages 32-35

Epitaxy of titanium nitride thin films grown by nitrogen implantation

(8) Kasukabe, Y a Ootubo, J a Takeda, S a Nagata, S b Kishimoto, M b Fujino, Y a Yamaguchi, S b Yamada, Y a

Author keywords

Epitaxy; Nitrogen implantation; Rutherford backscattering spectrometry; Titanium nitride; Transmission electron microscopy (TEM)

Indexed keywords

EPITAXIAL GROWTH; FILM PREPARATION; ION IMPLANTATION; LATTICE CONSTANTS; NITROGEN; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; THIN FILMS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC RECOIL DETECTION ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROMETRY;

FILM GROWTH;

EID: 4243912743 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(96)08568-9 Document Type: Article

Times cited : (4)

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