SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 11-16

Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy

(4) Schafer J a,b Ristein, J a Miyazaki, S a Ley, L a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b OHIO STATE UNIVERSITY (United States)

Author keywords

Band bending; Band offset; Photoelectron spectroscopy; Silicon carbon interface

Indexed keywords

AMORPHOUS FILMS; CARBON; DEPOSITION; ELECTRONIC PROPERTIES; FILM GROWTH; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; PLASMA APPLICATIONS; SILICON; SILICON CARBIDE; STOICHIOMETRY; SUBSTRATES;

PLASMA DEPOSITION;

INTERFACES (MATERIALS);

EID: 4243781936 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00497-2 Document Type: Article

Times cited : (10)

References (16)

1
- 0042390467
- M. Frischholz, Th. Mandel, R. Helbig, G. Schmidt, A. Hammerschmidt, Appl. Surf. Sci. 65/66 (1993) 784.
- (1993) Appl. Surf. Sci. , vol.65-66 , pp. 784
- Frischholz, M.¹ Mandel, Th.² Helbig, R.³ Schmidt, G.⁴ Hammerschmidt, A.⁵

2
- 0006321285
- Th. Mandel, M. Frischholz, R. Helbig, A. Hammerschmidt, Appl. Phys. Lett. 64 (1994) 3637.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 3637
- Mandel, Th.¹ Frischholz, M.² Helbig, R.³ Hammerschmidt, A.⁴

3
- 0042217090
- J.J. Pouch (Ed.), Properties and Characterization of Amorphous Carbon Films, Transtech, Zürich
- J. Robertson, in: J.J. Pouch (Ed.), Properties and Characterization of Amorphous Carbon Films, Mater. Sci. For. 52/53, Transtech, Zürich, 1990, p. 126.
- (1990) Mater. Sci. For. , vol.52-53 , pp. 126
- Robertson, J.¹

4
- 0041120776
- P. Sandner, U. Kaiser, M. Altebockwinkel, L. Wiedmann, A. Benninghoven, R.E. Sah, P. Koidl, J. Vac. Sci. Technol. A 5 (1987) 1470.
- (1987) J. Vac. Sci. Technol. A , vol.5 , pp. 1470
- Sandner, P.¹ Kaiser, U.² Altebockwinkel, M.³ Wiedmann, L.⁴ Benninghoven, A.⁵ Sah, R.E.⁶ Koidl, P.⁷

5
- 0024681632
- D. Ugolini, J. Eitle, P. Oelhafen, M. Wittmer, Appl. Phys. A 48 (1989) 549.
- (1989) Appl. Phys. A , vol.48 , pp. 549
- Ugolini, D.¹ Eitle, J.² Oelhafen, P.³ Wittmer, M.⁴

6
- 0042023411
- M. Kawasaki, G.J. Vandentop, M. Salmeron, G.A. Somorjai, Surf. Sci. 227 (1990) 261.
- (1990) Surf. Sci. , vol.227 , pp. 261
- Kawasaki, M.¹ Vandentop, G.J.² Salmeron, M.³ Somorjai, G.A.⁴

7
- 21544433109
- G.S. Higashi, Y.J. Chabal, G.W. Trucks, K. Raghavachari, Appl. Phys. Lett. 56 (1990) 656.
- (1990) Appl. Phys. Lett. , vol.56 , pp. 656
- Higashi, G.S.¹ Chabal, Y.J.² Trucks, G.W.³ Raghavachari, K.⁴

8
- 21544484606
- S. Miyazaki, J. Schäfer, J. Ristein, L. Ley, Appl. Phys. Lett. 66 (1996) 1247.
- (1996) Appl. Phys. Lett. , vol.66 , pp. 1247
- Miyazaki, S.¹ Schäfer, J.² Ristein, J.³ Ley, L.⁴

9
- 0028419879
- J. Schäfer, J. Ristein, L. Ley, Diamond Rel. Mater. 3 (1994) 861.
- (1994) Diamond Rel. Mater. , vol.3 , pp. 861
- Schäfer, J.¹ Ristein, J.² Ley, L.³

10
- 0000174033
- R.-C. Fang, L. Ley, Phys. Rev. B 40 (1989) 3818.
- (1989) Phys. Rev. B , vol.40 , pp. 3818
- Fang, R.-C.¹ Ley, L.²

11
- 77956954940
- J.I. Pankove, N.M. Johnson, Academic Press, New York, NY
- J.I. Pankove, in: J.I. Pankove, N.M. Johnson, Hydrogen in Semiconductors, Semiconductors and Semimetals, Vol. 34, Academic Press, New York, NY, 1991, p. 91.
- (1991) Hydrogen in Semiconductors, Semiconductors and Semimetals , vol.34 , pp. 91
- Pankove, J.I.¹

12
- 0041522469
- M.W. Horn, J.M. Heddleson, S.J. Fonash, Appl. Phys. Lett. 51 (1987) 490.
- (1987) Appl. Phys. Lett. , vol.51 , pp. 490
- Horn, M.W.¹ Heddleson, J.M.² Fonash, S.J.³

13
- 0001532789
- N.M. Johnson, F.A. Ponce, R.A. Street, R.J. Nemanich, Phys. Rev, B 35 (1987) 4166.
- (1987) Phys. Rev, B , vol.35 , pp. 4166
- Johnson, N.M.¹ Ponce, F.A.² Street, R.A.³ Nemanich, R.J.⁴

14
- 0000082886
- A. Asano, Appl. Phys. Lett. 56 (1990) 533.
- (1990) Appl. Phys. Lett. , vol.56 , pp. 533
- Asano, A.¹

15
- 0042217089
- PhD Thesis, Univ. Erlangen
- T. Mandel, PhD Thesis, Univ. Erlangen, 1994.
- (1994)
- Mandel, T.¹

16
- 21544473198
- G.A.J. Amaratunga, D.E. Segal, D.R. McKenzie, Appl. Phys. Lett. 59 (1991) 69.
- (1991) Appl. Phys. Lett. , vol.59 , pp. 69
- Amaratunga, G.A.J.¹ Segal, D.E.² McKenzie, D.R.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.