Critical conditions for the generation of the misfit dislocations during the boron diffusion in silicon: Analytical evaluation

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 223-228

  Gaiseanu, F ^a  

^a Research Institute for Electronics Bucharest   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; DIFFUSION IN SOLIDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

ANALYTICAL EVALUATION; BORON DIFFUSIONS; CHEMICAL SOURCES; CRITICAL CONDITION; CRITICAL THICKNESS; DIFFUSION TEMPERATURE; MAXIMUM CONCENTRATIONS; SURFACE CONCENTRATION;

BORON;

EID: 4243746042     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (9)

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2. F. Gaiseanu, Physica Status Solidi, 1983, (a), 77, K59.
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4. F. Gaiseanu, and W. Schröter, 1986-th Meeting of the Electrochem. Soc., Miami Florida, 1994, oct. 9-14.
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6. F. Gaiseanu, Extended Abstracts, Electrochem. Soc., Pennington NJ, 1904, vol 34-2 , 715 and J. Electrochem. Soc., 1984, 131, 318 C.
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9. F. Gaiseanu, 1984, Doctoral Thesis, Faculty of Physics, University of Buchar