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Volumn 219-220, Issue 1-4, 1996, Pages 59-61
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Effect of nonequilibrium acoustic phonons on exciton states in interrupted grown GaAs/Al0.33 Ga0.67As quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
EXCITONS;
INTERFACES (MATERIALS);
LUMINESCENCE;
PHONONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
HEAT PULSES;
INTERFACE STEP DENSITY;
NONEQUILIBRIUM ACOUSTIC PHONONS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 4243724579
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/0921-4526(95)00649-4 Document Type: Article |
Times cited : (6)
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References (8)
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