Noble transparent semiconductor MgIn2O4

Solid State Phenomena

Volumn 51-52, Issue , 1996, Pages 317-322

  Ueda, N ^a   Hosono, H ^a,b   Kawazoe, H ^b  

^a INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Band gap widening; Effective mass; Energy band calculation; Ion implantation

Indexed keywords

EID: 4243718238     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (6)

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3. T. Omata, N. Ueda, N. Hikuma, K. Ueda, H. Mizoguchi, T. Hashimoto and H. Kawazoe, Appl. Phys. Lett. 62, 499 (1993)
4. T. S. Moss, Proc. Phys. Soc London B87, 775 (1954)
5. Y. Ohhata, F. Shrooki and S. Yoshida, Thin Solid Films 59, 255 (1979)
6. I. Hamberg and C. G. Granqvist, J. Appl. Phys 60, R123 (1986).