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Volumn 58, Issue 3, 1998, Pages 2567-2576

Carrier-carrier interaction and ultrashort pulse propagation in a highly excited semiconductor laser amplifier beyond the rate equation limit

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EID: 4243682794     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.58.2567     Document Type: Article
Times cited : (15)

References (57)
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    • Note that the Coulomb exchange in the scattering terms are neglected here since for our studies only a small reduction of the overall dephasing rate would take place, changing the results quantitatively but not qualitatively
    • Note that the Coulomb exchange in the scattering terms are neglected here since for our studies only a small reduction of the overall dephasing rate would take place, changing the results quantitatively but not qualitatively.
  • 33
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    • For a textbook discussion see W. W. Chow, S. W. Koch, and M. Sargent. III, Semiconductor-Laser Physics (Springer, Berlin, 1994)
    • For a textbook discussion see W. W. Chow, S. W. Koch, and M. Sargent. III, Semiconductor-Laser Physics (Springer, Berlin, 1994).
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    • Note that the transparency point for the microscopic calculations and the RTA simulations differ somewhat because they yield different optical dephasing rates; in addition, the microscopic dephasing processes manifest in highly non-Lorentzian interband line shapes
    • Note that the transparency point for the microscopic calculations and the RTA simulations differ somewhat because they yield different optical dephasing rates; in addition, the microscopic dephasing processes manifest in highly non-Lorentzian interband line shapes.


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