Study of point defects in silicon by means of positron annihilation with core electrons

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 605-607

  Kuriplach, J ^a,b   Van Hoecke, T ^a   Van Waeyenberge, B ^a   Dauwe, C ^a   Segers, D ^a   Balcaen, N ^a   Morales, A L ^c   Trauwaert, M A ^d   Vanhellemont, J ^d   Sob M ^e  

^a GHENT UNIVERSITY   (Belgium)

^b CHARLES UNIVERSITY   (Czech Republic)

^c UNIVERSIDAD DE ANTIOQUIA   (Colombia)

^d IMEC   (Belgium)

^e INSTITUTE OF MATHEMATICS   (Czech Republic)

Author keywords

Core Electrons; Defects in Si; Momentum Distribution; Positron Annihilation Spectroscopy

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL GROWTH FROM MELT; ELECTRONS; IRRADIATION; PHOTONS; POINT DEFECTS;

ATOMIC RELAXATIONS; MOMENTUM DISTRIBUTION; POSITRON ANNIHILATION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 4243672572     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.255-257.605     Document Type: Article

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