Resonant Tunneling through a Macroscopic Charge State in a Superconducting Single Electron Transistor

Physical Review Letters

Volumn 78, Issue 25, 1997, Pages 4821-4824

  Averin, D V ^a   Korotkov, A N ^b   Manninen, A J ^c   Pekola, J P ^c  

^a STONY BROOK UNIVERSITY   (United States)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; LOW TEMPERATURE EFFECTS; QUANTUM THEORY; RESONANCE; TRANSISTORS;

MACROSCOPIC CHARGE STATE; QUASIPARTICLE TRANSPORT; RESONANT TUNNELING; SUPERCONDUCTING DENSITY OF STATE; SUPERCONDUCTING SINGLE ELECTRON TRANSISTOR;

JOSEPHSON JUNCTION DEVICES;

EID: 4243659821     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.78.4821     Document Type: Article

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