The change of Au-ZnS and Au-CdS diode structure parameters caused by low-dose X-ray irradiation

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 269-272

  Pavlyk, B ^a   Horyn, Ya ^a   Tsybulyak, B ^a  

^a IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

Author keywords

Deep level; Diode structure; Surface states; X Ray irradiation

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; GOLD; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; X RAY ANALYSIS; ZINC SULFIDE; CADMIUM SULFIDE; II-VI SEMICONDUCTORS; IRRADIATION; KINETIC PARAMETERS; MOLECULAR SPECTROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SURFACE STATES; WIDE BAND GAP SEMICONDUCTORS; X RAYS;

CADMIUM SULFIDE;

SEMICONDUCTOR DIODES; GOLD COMPOUNDS;

CONCENTRATION DISTRIBUTIONS; DEEP LEVEL; DENSITY DISTRIBUTIONS; DIODE STRUCTURE; IMPURITY DISTRIBUTION; NEAR SURFACE REGIONS; SURFACE-BARRIER STRUCTURES; X RAY IRRADIATION;

EID: 4243588673     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.269     Document Type: Article

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