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11
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-
84926871167
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It should be noted that the intrinsic case with only donor doping is hypothetical, since such donor doping would lead to n-type material. However, this intrinsic case would correspond to fully compensated material.
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-
-
-
12
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-
84926849342
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A similar analysis was used in Ref. 6, but the resultant Eq. (6.4b) was incorrect.
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-
-
-
14
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-
84926827075
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Such solubilities would be the measured solubilities for narrower-gap materials provided the measurement temperature is high enough so that EFapprox EI.
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-
-
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16
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-
84926871166
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In general, the equilibrium solubility decreases with temperature, so that as long as impurities are mobile those in excess could coalesce and form a second phase; however, once the system reaches a temperature such that there is minimal ion motion, the equilibrium at that temperature will be ``frozen in.''
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-
-
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17
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84926825777
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Obtained from the 0-K band gap as given by, Phys. Rev. B 23, 4888 (1981), with the temperature dependence given by
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2014
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-
Dean, P.J.1
Herbert, D.C.2
Werkhoven, C.J.3
Fitzpatrick, B.J.4
Bhargava, R.N.5
Shirakawa, Y.6
Kukimoto, H.7
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19
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84926871165
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A comparison of literature data, given in Ref. 2, shows that self-diffusion coefficients tend to be appreciably higher in the II-VI compounds than in the III-V compounds. It seems reasonable to assume that the same would also hold for impurity diffusion.
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-
-
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20
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-
0002040804
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The band-gap shrinkage, for instance for n-type GaAs, is predicted to be 0.25 eV at a donor concentration of 5 times 1018/ cm3 by, Phys. Rev. B 33, 8582 (1986), and is thus definitely nontrivial. It was not included for Table I because no adequate information appears available for high temperatures. For instance, includes the effect of the density of states and shows this to be larger at higher temperatures;
-
(1986)
J. Appl. Phys.
, vol.60
, pp. 2854
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Sernelius, B.E.1
Lowney, J.R.2
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21
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84926871164
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however, his results went only to 300 K, and only up to Nd= 1017/cm3.
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-
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24
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0019899272
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For recent MOCVD results on conducting n-type ZnSe, see, for example
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 284
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-
Stutius, W.1
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31
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84926827074
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See, for example, A. T. Collins and E. C. Lightowlers, in Properties of Diamond, edited by J. E. Field (Academic, New York, 1979), p. 79.
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