Nitridation of Sio2thin films in low ammonia pressures: An AES, SIMS, XPS and Raman spectroscopy investigation

Surface Science

Volumn 205, Issue 1-2, 1988, Pages 287-310

  Glachant, A ^a   Balland, B ^b   Ronda, A ^a   Bureau, J C ^b   Plossu, C ^b  

^a CAMPUS DE LUMINY   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243535975     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(88)90177-X     Document Type: Article

References (54)

1. Ammonia-Annealed SiO2Films for Thin-Gate Insulator
2. 2for VLSI
3. Kinetics of Si(100) nitridation first stages by ammonia: Electron- beam-induced thin film growth at room temperature
4. High-temperature thermal nitridation and low-temperature electron-beam-enhanced nitridation of SiO2 thin films
5. Multiphonon Raman Spectrum of Silicon
6. Chemical heterogeneity in off stoichiometry a-SixNyHz from a collective vibrational modes study
7. Low temperature nitridation and hydrogenation of Si films with NH : a photoemission study
8. Auger depth profiling of MNOS structures by ion sputtering
9. A study of the charging and dissociation of SiO2 Surfaces by AES
10. Auger electron spectroscopy studies of silicon nitride, oxide, and oxynitride thin films: Minimization of surface damage by argon and electron beams
11. Two-Particle Collisions. I. General Relations for Collisions in the Laboratory System