Two-dimensional borderless contact pad technology for a 0.135 μm2 4-gigabit DRAM cell

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 25-28

  Koga, H ^a   Matsuki, T ^a   Kasai, N ^a   Tatsumi, T ^a   Hayashi, Y ^a   Saito, Y ^a   Nakajima, K ^a   Tokunaga, K ^a   Yamada, Y ^a   Onoda, N ^a   Tokashiki, K ^a   Nishizawa, A ^a   Kawamoto, H ^a   Koyama, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM); TWO DIMENSIONAL BORDERLESS CONTACT PAD TECHNOLOGY;

ANISOTROPY; EPITAXIAL GROWTH; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

POINT CONTACTS;

EID: 4243381897     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)