Evaluation of sputtered tungsten as diffusion barrier materials for copper

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1285-1290

  Mercier, M ^a   Weber, S ^a   Jacques, A ^a   Hirabayashi, H ^b   Ohkawa, H ^b   Kinoshita, M ^b  

^a UNIVERSITÉ DE LORRAINE   (France)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Copper; Diffusion barrier; Grain boundary; Tungsten

Indexed keywords

ACTIVATION ENERGY; COPPER; GRAIN BOUNDARIES; SILICON WAFERS; TUNGSTEN;

APPARENT ACTIVATION ENERGY; CU ATOMS;

DIFFUSION BARRIERS;

EID: 4243355529     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1285     Document Type: Article

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