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Volumn 60, Issue 16, 1999, Pages 11747-11754

Cluster modeling of electronic structure and nonlinear properties for the optical materials (formula presented)

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EID: 4243311550     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.11747     Document Type: Article
Times cited : (17)

References (25)
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    • The input parameters are as follows. Slater exponents (Formula presented) (Formula presented) Valence-state ionization energies (Formula presented) (Formula presented) (Formula presented) B: (Formula presented) eV, (Formula presented) eV, O: (Formula presented) (Formula presented) Coulomb repulsion integrals Li: γ=4.57 eV, Cs: γ=1.75 eV, B: γ= 8.68 eV, O: γ=13.00 eV. Resonance integrals Li: β=-9.00 eV, Cs: β=-3.22 eV, B: β=-17.00 eV, O: β=-34.20 eV.
    • The input parameters are as follows. Slater exponents (Formula presented) (Formula presented) Valence-state ionization energies (Formula presented) (Formula presented) (Formula presented) B: (Formula presented) eV, (Formula presented) eV, O: (Formula presented) (Formula presented) Coulomb repulsion integrals Li: γ=4.57 eV, Cs: γ=1.75 eV, B: γ= 8.68 eV, O: γ=13.00 eV. Resonance integrals Li: β=-9.00 eV, Cs: β=-3.22 eV, B: β=-17.00 eV, O: β=-34.20 eV.


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