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Physical Review B

Volumn 50, Issue 23, 1994, Pages 17705-17708

Growth of Co films on Cu(111) studied in real space

(5) Hochstrasser, M a Zurkirch, M a Wetli, E a Pescia, D a Erbudak, M a

a ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243274899 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.50.17705 Document Type: Article

Times cited : (24)

References (17)

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3
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- Surface etching and enhanced diffusion during the early stages of the growth of Co on Cu(111)
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- de la Figuera, J.¹ Prieto, J.E.² Ocal, C.³ Miranda, R.⁴

4
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5
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7
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- Tonner, B.P.¹ Han, Z.-L.² Zhang, J.³

8
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- Lamelas, F.J.¹ Lee, C.H.² He³ Vavra, W.⁴ Clarke⁵

9
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10
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- (1994) Appl. Surf. Sci. , vol.78 , pp. 185
- Erbudak, M.¹ Hochstrasser, M.² Schulthess, T.³ Wetli, E.⁴

11
- 84931515915
- Considering that electrons traverse the surface layers (the interlayer spacing is 2.05 Å) twice before they are recorded, and taking 16 Å for the mean-free path given by the ``universal curve'' (Ref. 12), the contribution of the top, 2, 4, and 6 ML to the total recorded signal is approximately 40%, 64%, and 79%, respectively.

12
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- Seah, M.P.¹ Dench, W.A.²

13
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- Tonner, B.P.¹

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- Wetli, E.¹ Erbudak, M.² Vvedensky, D.D.³

15
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- Although the ``universal curve'' for the mean-free path of electrons (Ref. 12) as a function of their energy suggests a value of around 10 Å for 716-eV electrons, detailed studies (Refs. 9 and 17) of Co growth on Cu(100) agree on values as low as 3 Å. Here we have used 4 Å given by Li and Tonner (Ref. 13) that seems most reliable. Certainly, this fact introduces systematic errors in the determination of the film thickness.

16
- 84931515903
- Capital letters denote the (111) layers of Cu, while the Co layers are depicted by small letters.

17
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