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85037889798
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Obtained using fractional dimensional method in Ref. 28 and the experimental value of the difference in energy between the (Formula presented) and (Formula presented) states of the heavy-hole exciton from Ref. 29, i.e., (Formula presented) In this calculation, we have used 4.2 meV as the exciton binding energy for 3D GaAs from Ref. 26
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Obtained using fractional dimensional method in Ref. 28 and the experimental value of the difference in energy between the (Formula presented) and (Formula presented) states of the heavy-hole exciton from Ref. 29, i.e., (Formula presented) In this calculation, we have used 4.2 meV as the exciton binding energy for 3D GaAs from Ref. 26.
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(private communication).
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B. Haase (private communication).
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Obtained using fractional dimensional method in Ref. 28 and the experimental value of the difference in energy between the (Formula presented) and (Formula presented) states of the heavy-hole exciton from Ref. 32, i.e., (Formula presented) In this calculation, we have used 20.8 meV as the exciton binding energy for 3D ZnSe from Ref. 31
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Obtained using fractional dimensional method in Ref. 28 and the experimental value of the difference in energy between the (Formula presented) and (Formula presented) states of the heavy-hole exciton from Ref. 32, i.e., (Formula presented) In this calculation, we have used 20.8 meV as the exciton binding energy for 3D ZnSe from Ref. 31.
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36
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35949008058
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