SCOPUS 정보 검색 플랫폼

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- Light Emission from Microcrystalline Si Confined in SiO2Matrix through Partial Oxidation of Anodized Porous Silicon
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- A theoretical study of various effects on the wavelength of photoluminescence in Si nanostructures
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35
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- edited by, S. S. Iyer, L. T. Canham, R. T. Collins, MRS Proceedings No. 256, Material Research Society, Pittsburgh
- (1992) Light Emission from Silicon , pp. 179-184
- Hybertsen, M.S.¹

41
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- Some results on the radiative recombination rates were already published in a previous paper (Ref. 19), but some small differences exist with the present paper. Reference 19 concerned a smaller number of crystallites than here. The calculation was done without taking the temperature into account and some degeneracies was not correctly included. In addition, we did not know at this time a realistic value for the refraction index n of porous silicon and we used n=2.6. Here we have used n=1.33.

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- There is a misprint in the last term of Eq. (29) of Ref. 55. The right equation is the Eq. (6) of the present paper.

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.