Thermal expansion imaging and finite element simulation of hot lines in high power AlGaN HEMT devices

Superlattices and Microstructures

Volumn 35, Issue 3-6, 2004, Pages 477-484

  Dietzel, D ^a   Meckenstock, R ^a   Chotikaprakhan, S ^a   Bolte, J ^a   Pelzl, J ^a   Aubry, R ^b   Jacquet, J C ^b   Cassette, S ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ELECTRIC EXCITATION; FINITE ELEMENT METHOD; REDUCTION; SEMICONDUCTOR DEVICES; TEMPERATURE MEASUREMENT; THERMAL EXPANSION;

SCANNING THERMAL MICROSCOPY (STHM); SCANNING THERMO-ELASTIC MICROSCOPY (STHEM); THERMAL SENSORS; THERMO-ELASTIC MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4243179056     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2003.09.009     Document Type: Conference Paper

References (7)

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7. J. Bolte, Ph.D. Thesis, Faculty of Physics and Astronomy, Ruhr-University Bochum, 1999.