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Volumn 47-48, Issue , 1996, Pages 319-324
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DX-like centers in dislocated compound semiconductors: A new aspect of the interaction between extended defects and impurities
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Author keywords
[No Author keywords available]
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Indexed keywords
CADMIUM SULFIDE;
II-VI SEMICONDUCTORS;
III-V SEMICONDUCTORS;
CAPACITANCE SPECTROSCOPY;
COMPOUND SEMICONDUCTORS;
DONOR LEVELS;
EXTENDED DEFECT;
INTERACTION OF DISLOCATIONS;
LATTICE DISTORTIONS;
LATTICE RELAXATION;
SEMICONDUCTOR DEVICE MANUFACTURE;
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EID: 4243161514
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: None Document Type: Article |
Times cited : (1)
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References (19)
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