Effect of current reversal on the failure mechanism of Al-Cu-Si narrow interconnects

Journal of Electronic Materials

Volumn 25, Issue 2, 1996, Pages 293-296

  Kim, Choong Un ^a   Kang, S H ^a   Morris, J W ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Al Cu Si; Electromigration; Interconnects

Indexed keywords

EID: 4243131926     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666258     Document Type: Article

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