A transmission electron microscopy study of microstructural defects in proton implanted silicon

Journal of Applied Physics

Volumn 80, Issue 8, 1996, Pages 4767-4769

  Gao, Min ^a   Duan, X F ^a   Li, Jianming ^b   Wang, Fenglian ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243115572     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363414     Document Type: Article

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