Transient photovoltaic investigations of a Schottky-type porous silicon diode

Journal of Physics D: Applied Physics

Volumn 29, Issue 5, 1996, Pages 1326-1328

  Zhao, Shiyou ^a   Lu, Xingze ^a   Zhang, Fulong ^a   Jiang, Hongbing ^a   Wang, Wencheng ^a   Hou, Xiaoyuan ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CHARGE CARRIERS; CURRENT DENSITY; ETCHING; LASER PULSES; PHONONS; PHOTOVOLTAIC EFFECTS; POROUS SILICON; Q SWITCHED LASERS; QUANTUM THEORY; SILICON WAFERS;

DECAY COMPOUNDS; DECAY TIME; EXCITATION INTENSITY; SURFACE STATES; TRANSIENT PHOTOVOLTAGE;

SCHOTTKY BARRIER DIODES;

EID: 4243092966     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/5/029     Document Type: Article

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