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Volumn 20, Issue 1, 1973, Pages 182-189

Field Effect Transistors for Charge Amplifiers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 4243063915     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1973.4326904     Document Type: Article
Times cited : (24)

References (15)
  • 2
    • 84939744164 scopus 로고
    • Versailles, France state of the Art of Low Noise Amplifiers for Semiconductor Radiation Detectors, International Symp
    • V. Radeka, state of the Art of Low Noise Amplifiers for Semiconductor Radiation Detectors, International Symp. on Nucl. Electronics, Vol. 1 (Versailles, France, 1968) p. 61–1
    • (1968) Nucl. Electronics , vol.1 , pp. 61-1
    • Radeka, V.1
  • 5
    • 84939707344 scopus 로고
    • AERE - R6699
    • K. Kandiah, AERE - R6699 (1971)
    • (1971)
    • Kandiah, K.1
  • 9
    • 50549213929 scopus 로고
    • Solid State Electronics
    • I. Richer, Solid State Electronics 6 (1963) 539
    • (1963) , vol.6 , pp. 539
    • Richer, I.1
  • 13
    • 84939697317 scopus 로고
    • Semiconductor Nuclear-Particle Detectors and Circuits
    • Publication 1593
    • V. Radeka, Semiconductor Nuclear-Particle Detectors and Circuits, Natl. Acad. of Sciences Publication 1593 (1969) p. 393
    • (1969) Natl. Acad. of Sciences , pp. 393
    • Radeka, V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.