Fine defective structure of silicon carbide powders obtained from different starting materials

Science of Sintering

Volumn 38, Issue 2, 2006, Pages 177-181

  Tomila, T V ^a   Vlasova, M V ^b   Kakazey, M G ^b   Vyshnyakova, K L ^a   Ragulya, A V ^a   Pereselentseva, L N ^a  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

Author keywords

Absorption frequency; Intensity; Silicon carbide; Tattice parameter

Indexed keywords

EID: 42249105183     PISSN: 0350820X     EISSN: None     Source Type: Journal    
DOI: 10.2298/SOS0602177T     Document Type: Article

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