First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6706, Issue , 2007, Pages

  Lordi, Vincenzo ^a   Åberg, Daniel ^a   Erhart, Paul ^a   Wu, Kuang Jen ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Aluminum antimonide; Carrier lifetime; Defect; Density functional theory; Formation energy; Impurity; Mobility; Semiconductor

Indexed keywords

CARRIER LIFETIME; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; IMPURITIES; POINT DEFECTS; RADIATION DETECTORS;

ALUMINUM ANTIMONIDE; FORMATION ENERGY; MATERIAL QUALITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 42149127612     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.739117     Document Type: Conference Paper

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