High-power InGaN LEDs: Present status and future prospects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6910, Issue , 2008, Pages

  Hahn, B ^a   Weimar, A ^a   Peter, M ^a   Baur, J ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

High brightness; InGaN; White LED

Indexed keywords

INDUSTRIAL RESEARCH; LIGHT EMISSION;

FUTURE PROSPECTS; HIGH POWERS; LIGHT-EMITTING DIODES; THINGAN;

LIGHT EMITTING DIODES;

EID: 42149125998     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.767255     Document Type: Conference Paper

References (5)

1. Strategies Unlimited HB-LED, 2003, 2005, 2006
2. I.Schnitzer, E.Yablonovitch, C.Caneau, T.Gmitter, A.Scherer, Appl. Phys. Lett. 63, 2174 (1993)
3. V.Haerle, B.Hahn, A.Weimar, D.Eisert, S.Bader, A.Ploessl, F.Eberhard; Light extraction technology for high efficiency GaInN-LED devices, Peoceedings of SPIE, Vol. 4996, p 133 (2003)
4. US Patent No. 6 740 604
5. M. Peter et al, to be published in phys stat sol (Proceedings of ICNS 2007)