The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): The importance of the basis set superposition error in strongly bound systems

Journal of Chemical Physics

Volumn 128, Issue 14, 2008, Pages

  Tzeli, Demeter ^a   Tsekouras, Athanassios A ^b  

^a THEORETICAL AND PHYSICAL CHEMISTRY INSTITUTE   (Greece)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; ELECTRON AFFINITY; ELECTRON CORRELATIONS; ERROR ANALYSIS; GROUND STATE;

COUPLED CLUSTER METHODS; DIGALLIUM NITRIDE; DISSOCIATION ENERGIES; STRONGLY BOUND SYSTEMS; SUPERPOSITION ERRORS;

GALLIUM NITRIDE;

EID: 42149104955     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2883997     Document Type: Article

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