Hysteretic behavior of angular dependence of exchange bias in FeNiFeMn bilayers: A new signature

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Shi, Z ^a   Gao, T R ^a   Zhou, S M ^a   Chantrell, R ^b   Asselin, P ^c   Bai, X J ^d   Du, J ^d   Wu, X S ^d  

^a FUDAN UNIVERSITY   (China)

^b UNIVERSITY OF YORK   (United Kingdom)

^c SEAGATE RESEARCH   (United States)

^d NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; FERROMAGNETIC MATERIALS; FUNCTION EVALUATION; THICKNESS CONTROL;

CONSTITUENT LAYER THICKNESS; MAGNETIC STATE;

ANGULAR DISTRIBUTION;

EID: 42149104447     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2832863     Document Type: Article

References (6)

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6. R. W. Chantrell, N. Walmsley, J. Gore, and M. Maylin, Phys. Rev. B 63, 024410 (2000).