Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates

Physica B: Condensed Matter

Volumn 403, Issue 12, 2008, Pages 2008-2014

  Zhang, Hong Di ^a,b   An, Yu Kai ^b   Mai, Zhen Hong ^b   Lu, Hui Bin ^b   Zhao, Kun ^b   Pan, Guo Qiang ^c   Li, Rui Peng ^c   Fan, Rong ^c  

^a TIANJIN UNIVERSITY OF COMMERCE   (China)

^b INSTITUTE OF PHYSICS   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Microstructures; Oriented growth; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM THICKNESS; LANTHANUM COMPOUNDS; MICROSTRUCTURE; STRONTIUM COMPOUNDS; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

DIFFRACTION INTENSITY; EPITAXIAL ORIENTED GROWTH; THICKNESS DEPENDENCE;

THIN FILMS;

EID: 41949111899     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.11.009     Document Type: Article

References (19)

1. Jin S., Tiefel T.H., Mccormack M., Fastnacht R.A., Ramesh R., and Chen L.H. Science 264 (1994) 413
2. Jin S., Tiefel T.H., Mccormack M., Obryan H.M., Chen L.H., Ramesh R., and Schurig D. Appl. Phys. Lett. 67 (1995) 557
3. Gallagher W.J., Parkin S.S.P., Lu Y., Bian X.P., Marley A., Roche K.P., Altman R.A., Rishton S.A., Jahnes C., Shaw T.M., and Xiao G. J. Appl. Phys. 81 (1997) 3741
4. Jorzick J., Demokritov O., Hillebrands B., Bartenlian B., Chappert C., Decanini D., Rousseaux F., and Cammbril E. Appl. Phys. Lett. 75 (1999) 3859
5. Tsui F., Smoak M.C., Nath T.K., and Eom C.B. Appl. Phys. Lett. 76 (2000) 2421
6. Amaral V.S., Lourenco A.A.C.S., Araújo J.P., Tavares P.B., Alves E., Sousa J.B., Vieira J.M., da Silva M.F., and Soares J.C. J. Magn. Magn. Mater. 211 (2000) 1
7. Lowndes D.H., Zheng X.Y., Zhu S., Budai J.D., and Warmack R.J. Appl. Phys. Lett. 61 (1992) 852
8. Schlom D.G., Angelmetti D., Bednorz J.D., Broom R.F., Catana A., Frey T., Gerber C., Guntherodt H.J., Lang H.P., and Mannhart J. Z. Phys. B 86 (1992) 163
9. Eom C.B., Cava R.J., Fleming R.M., Phillips J.M., van Dover R.B., Marshall J.H., Hsu J.W.P., Krajewski J.J., and Peck Jr. W.F. Science 258 (1992) 1766
10. Kwo J., Fleming R.M., Kao H.L., Werder D.J., and Chen C.H. Appl. Phys. Lett. 60 (1992) 1905
11. Fatemi M., Wickenden A.E., Koleske D.D., Twigg M.E., Freitas Jr. J.A., Henry R.L., and Gorman R.J. Appl. Phys. Lett. 73 (1998) 608
12. Zhao K., Jin K.J., Huang Y.H., Lu H.B., He M., Chen Z.H., Zhou Y.L., and Yang G.Z. Physica B 373 (2006) 72
13. Huang Y.H., He M., Zhao K., Tian H.F., Lu H.B., Jin K.J., Chen Z.H., Zhou Y.L., Li J.Q., and Yang G.Z. Chin. Phys. Lett. 22 11 (2005) 2950
14. Lu X.B., Lu H.B., Chen Z.H., Zhang X., Huang R., Zhou H.W., Wang X.P., Nguyen B.Y., Wang C.Z., Xiang W.F., He M., and Cheng B.L. Appl. Phys. Lett. 85 16 (2004) 3543
15. Chen F., Lu H.B., Zhao T., Wang R.P., Zhou Y.L., Chen Z.H., and Yang G.Z. Sci. China Ser. A 44 7 (2001) 947
16. Yang G.Z., Lu H.B., Chen F., Zhao T., and Chen Z.H. J. Cryst. Growth 227 (2001) 929
17. Parratt L.G. Phys. Rev. 95 (1954) 359
18. Luo G.M., Yan M.L., Mai Z.H., Lai W.Y., and Wang Y.T. Phys. Rev. B 56 (1997) 3290
19. Cox D.E., Iglesias T., Moshopoulou E., Hirota K., Takahashi K., and Endoh Y. Phys. Rev. B 64 (2001) 024431