Plasma active sintering of silicon carbide

Materials Science and Engineering: A

Volumn 483-484, Issue 1-2 C, 2008, Pages 270-273

  Jin, Hai Yun ^a   Ishiyama, Masaaki ^b   Qiao, Guan Jun ^a   Gao, Ji Qiang ^a   Jin, Zhi Hao ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b Elenix Limited Company   (Japan)

Author keywords

Microstructure; Plasma activated sintering; SiC

Indexed keywords

BENDING STRENGTH; FRACTURE TOUGHNESS; GRAIN GROWTH; MICROSTRUCTURE; SINTERING;

PLASMA-ACTIVATED SINTERING;

SILICON CARBIDE;

BENDING STRENGTH; FRACTURE TOUGHNESS; GRAIN GROWTH; MICROSTRUCTURE; SILICON CARBIDE; SINTERING;

EID: 41849105449     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.09.134     Document Type: Article

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