Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 2, Issue , 2006, Pages 1789-1792

  Yamaguchi, Masafumi ^a   Ekins Daukes, Nicholas J ^a,e   Lee, Hae Seok ^a   Sumita, Taishi ^b   Imaizumi, Mitsuru ^b   Takamoto, Tatsuya ^c   Agui, Takaaki ^c   Kaneiwa, Minoru ^c   Kamimura, Kunio ^c   Ohshima, Takeshi ^d   Itoh, Hisayoshi ^d  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c SHARP CORPORATION   (Japan)

^d JAPAN ATOMIC ENERGY AGENCY   (Japan)

^e UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; PROTON IRRADIATION; SEMICONDUCTOR DOPING;

CARRIER REMOVAL; RADIATION RESISTANCE; RADIATION TOLERANT;

SOLAR CELLS;

EID: 41749125428     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279838     Document Type: Conference Paper

References (4)

1. T. Sumita et al., Proc. WCPEC-3, (2003) p.689.
2. M. Yamaguchi et al., Solar Energy Materials & Solar Cells, 75, 285 (2003).
3. J.Nelson, "The Physics of Solar Cells", Imperial College Press, (2003)
4. S.Adachi, J.Appl.Phys., 66(12):6030-6040, (1989).