Material challenges for terawatt level deployment of photovoltaics

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 2, Issue , 2006, Pages 2469-2472

  Feltrin, A ^a   Freundlich, A ^a  

^a University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; EPITAXIAL GROWTH; INDIUM; SILICON WAFERS; TELLURIUM; THIN FILMS;

CONCENTRATOR CELLS; ENERGY PRODUCTION; GLOBAL MATERIAL RESERVES; MATERIAL CHALLENGES; TERAWATT LEVEL;

PHOTOVOLTAIC EFFECTS;

EID: 41749116092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279727     Document Type: Conference Paper

References (9)

1. IPCC, Climate change 2001: Mitigation, available at: www.grida/climate/ ipcc_tar/wg3/index.html
2. I. M. Hoffert et al., Nature 395, 1998, p 881.
3. I. M. Hoffert et al., Nature 398, 2003, p 981.
4. S. Pacala et al., Science 305, 2004, p 968.
5. U.S. Geological Survey, Mineral Commodities Summaries 2005, available at: www.usgs.gov/minerals/pubs/commodity/
6. M. A. Green et al., Progress in Photovoltaics 14, 2006, p 45.
7. R. W. McClelland, C. O. Bozler, and J. C. C. Fan ."A technique for producing epitaxial films on reuseable substrates", Appl. Phys. Lett. 37, 1980, p 560.
8. Eli Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat "Extreme selectivity in the lift-off of epitaxial GaAs films", Appl. Phys. Lett. 51, 1987, p 2222.
9. A. Fontcuberta et al "InGaAs/lnP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation, Appl. Phys. Lett. 83, 2003, p 541.