Elit process: Epitaxial layers for interdigitated back contacts solar cells transferred

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 1126-1129

  Kraiem, J ^a   Papet, P ^a   Nichiporuk, O ^a   Amtablian, S ^a   Lelievre, J F ^a   Quoizola, S ^a   Fave, A ^a   Kaminski, A ^a   Ribeyron, P J ^b   Jaussaud, C ^b   Lemiti, M ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL LAYERS; POROUS SILICON; SILICON COMPOUNDS; SINGLE CRYSTALS; VAPOR PHASE EPITAXY;

CRYSTAL QUALITY; ELIT PROCESS; SINGLE CRYSTAL EPITAXIAL LAYERS;

SOLAR CELLS;

EID: 41749091350     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279359     Document Type: Conference Paper

References (8)

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2. R. Brendel, Solar Energy, 77, 2004, 969-982.
3. O. Nichiporuk, A. Kaminski, M. Lemiti, A. Fave and V. Skryshevsky, 86, 2005, 517-526.
4. th EPVSEC, Paris, France, 2004, 387-390.
5. J. Kraiem, E. Tranvouez, A. Fave, G. Brémond and M. Lemiti, 31th IEEE Photovoltaic Specialists Conference and Exhibition, Orlando (USA), 2005, 1107-1111.
6. P. Papet, O. Nichiporuk, Kaminski, Y. Rozier, J. Kraiem, and al., Solar Energy Materials and Solar Cells, 2006, In press.
7. th PVSEC, Shanghai, China, 2005.
8. R. A. Sinton, NREL 9th Workshop on Crystalline Silicon Solar Cells and Materials and Processes, 1999.