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Volumn 28, Issue 9, 2008, Pages 1845-1855

The influence of cooling rate and SiO2 additions on the grain boundary structure of Mn-doped PTC thermistors

Author keywords

BaTiO3; Grain boundaries; PTC; Thermistors

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MICROSTRUCTURAL EVOLUTION; POSITIVE TEMPERATURE COEFFICIENT; SCHOTTKY BARRIER DIODES; SILICA; THERMISTORS;

EID: 41549139562     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.12.034     Document Type: Article
Times cited : (27)

References (26)
  • 3
    • 0037611590 scopus 로고
    • Grain boundary phenomena in electronic ceramics
    • Jonker G.H. Grain boundary phenomena in electronic ceramics. Am. Ceram. Soc. (1981) 155
    • (1981) Am. Ceram. Soc. , pp. 155
    • Jonker, G.H.1
  • 8
    • 41549159517 scopus 로고    scopus 로고
    • Hozer L, Semiconductor Ceramics: Grain Boundary Effects, Ellis Horwood, Polish Scientific Publishers PWN, 1994.
    • Hozer L, Semiconductor Ceramics: Grain Boundary Effects, Ellis Horwood, Polish Scientific Publishers PWN, 1994.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.