Precision treatment of silicon wafer edge utilizing ultrasonically assisted polishing technique

Journal of Materials Processing Technology

Volumn 201, Issue 1-3, 2008, Pages 531-535

  Kobayashi, N ^a   Wu, Y ^a   Nomura, M ^a   Sato, T ^b  

^a AKITA PREFECTURAL UNIVERSITY   (Japan)

^b Akita Seiko Co Ltd   (Japan)

Author keywords

Silicon wafer edge; Surface roughness; Ultrasonically assisted polishing

Indexed keywords

ABRASIVES; ACCELERATION; PARAMETER ESTIMATION; POLISHING; REMOVAL; SURFACE ROUGHNESS;

SILICON WAFER EDGE; ULTRASONIC VIBRATION; ULTRASONICALLY ASSISTED POLISHING;

SILICON WAFERS;

EID: 41549115485     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2007.11.220     Document Type: Article

References (8)

1. Deng J., and Lee T. Effect of ultrasonic surface finishing on the strength and thermal shock behavior of the EDMed ceramic composite. Int. J. Mach. Tools Manuf. 42 (2002) 245-250
2. Hocheng H., and Kou K.L. Fundamental study of ultrasonic polishing of mold steel. Int. J. Mach. Tools Manuf. 42 (2002) 7-13
3. Jones A.R., and Hull J.B. Ultrasonic flow polishing. Ultrasonics 36 (1998) 97-101
4. Kobayashi N., Wu Y., and Kato M. Fundamental study on the treatment of silicon wafer edge by ultrasonically assisted polishing. Proc. 2006 JSPE Autumn Conf. (2006) 421-422 (in Japanese)
5. Kobayashi N., Wu Y., and Kato M. Fundamental study on ultrasonically assisted polishing of silicon wafer edge. Proc. 2006 JSPE Tohoku Branch Symp. (2006) 1-2 (in Japanese)
6. Semiconductor Fab/Equipment/Facilities, Edited by Electric Journal Co., Ltd., Tokyo, 2004 (in Japanese).
7. Shimura F. Semiconductor Silicon Crystal Engineering (1993), MARUZEN Co., Ltd., Tokyo pp. 107-109
8. Yang W., Wu Y., and Kato M. A new approach to silicon wafer edge treatment by ultrasonically assisted polishing (UAP). Int. J. Mater. Prod. Technol. 42 (2006) 245-250