Optical control over surface-plasmon-polariton-assisted THz transmission through a slit aperture

Physical Review Letters

Volumn 100, Issue 12, 2008, Pages

  Hendry, E ^a   Garcia Vidal, F J ^b   Martin Moreno, L ^c   Rivas, J Gómez ^d   Bonn, M ^d   Hibbins, A P ^a   Lockyear, M J ^a  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c UNIVERSITY OF ZARAGOZA   (Spain)

^d FOM INSTITUTE AMOLF   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE PROPAGATION; PHOTOEXCITATION; POWER TRANSMISSION; SEMICONDUCTOR MATERIALS; SILICON WAFERS; SURFACE WAVES;

SLIT APERTURES; SURFACE PLASMON POLARITONS;

PLASMONS;

EID: 41549114070     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.123901     Document Type: Article

References (22)

1. T.W. Ebbesen, Nature (London) 391, 667 (1998). NATUAS 0028-0836 10.1038/35570
2. F.J. Garcia-Vidal, Phys. Rev. Lett. 90, 213901 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.90.213901
3. W.L. Barnes, Nature (London) 424, 824 (2003). NATUAS 0028-0836 10.1038/nature01937
4. Y. Takakura, Phys. Rev. Lett. 86, 5601 (2001). PRLTAO 0031-9007 10.1103/PhysRevLett.86.5601
5. W.L. Barnes, J. Opt. A Pure Appl. Opt. 8, S87 (2006). JOAOF8 1464-4258 10.1088/1464-4258/8/4/S06
6. H.J. Lezec, Science 297, 820 (2002). SCIEAS 0036-8075 10.1126/science.1071895
7. A.P. Hibbins, Appl. Phys. Lett. 81, 4661 (2002). APPLAB 0003-6951 10.1063/1.1527704
8. M.J. Lockyear, Appl. Phys. Lett. 84, 2040 (2004). APPLAB 0003-6951 10.1063/1.1688001
9. A. Agrawal and A. Nahata, Opt. Express 14, 1973 (2006). OPEXFF 1094-4087 10.1364/OE.14.001973
10. A. Agrawal, Opt. Express 13, 3535 (2005). OPEXFF 1094-4087 10.1364/OPEX.13.003535
11. C. Janke, Opt. Lett. 30, 2357 (2005). OPLEDP 0146-9592 10.1364/OL.30.002357
12. W. Zhang, Phys. Rev. Lett. 98, 183901 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.98.183901
13. E. Hendry, Phys. Rev. B PRBMDO 0163-1829 75, 235305 (2007). 10.1103/PhysRevB.75.235305
14. H.T. Chen, Opt. Lett. 32, 1620 (2007). OPLEDP 0146-9592 10.1364/OL.32.001620
15. L. Fekete, Opt. Lett. OPLEDP 0146-9592 32, 680 (2007). 10.1364/OL.32.000680
16. Drude parameters for our wafers are estimated from Hall measurements on a p-doped silicon wafer with similar conductivity [see R. Hull, Properties of Crystalline Silicon (INSPEC, London, 1999)]. Conductivity effective mass for holes is taken to be m*∼0.4me.
17. On short (ps) time scales, expansion or recombination is expected to be negligible. In this case, an estimate for the charge density can be obtained from the excitation fluence fl and the penetration depth of the visible light l0 through N(fl/l0). For 800 nm excitation l0∼1μm. Plasma frequencies can be estimated using ωp2=e2N/(ε0m*), with electron effective mass m*∼0.2me.
18. E. Hendry, Phys. Rev. B PRBMDO 0163-1829 75, 233202 (2007). 10.1103/PhysRevB.75.233202
19. K. Wang and D.M. Mittleman, Nature (London) 432, 376 (2004). NATUAS 0028-0836 10.1038/nature03040
20. J.R. Suckling, Phys. Rev. Lett. 92, 147401 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.92.147401
21. J.A. Sánchez-Gil and J.G. Rivas, Phys. Rev. B PRBMDO 0163-1829 73, 205410 (2006). 10.1103/PhysRevB.73.205410
22. M.A. Ordal, Appl. Opt. 22, 1099 (1983). APOPAI 0003-6935