Temperature dependence of photoluminescence from localized states of silicon nanocrystals in silicon-implanted quartz

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1271-1274

  Duong, P H ^a,b   Lavallard, P ^c   Oliver, A ^d   Itoh, T ^b  

^a INSTITUTE OF MATERIALS SCIENCE   (Viet Nam)

^b OSAKA UNIVERSITY   (Japan)

^c SORBONNE UNIVERSITÉ   (France)

^d UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DATUM; IMPLANTATION ENERGIES; NONRADIATIVE DECAY PROCESS; PHOTOLUMINESCENCE INTENSITIES; RADIATIVE RECOMBINATION; SILICON NANOCRYSTALS; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION PROCESS;

ION IMPLANTATION; PHOTOLUMINESCENCE; QUARTZ; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION;

OPTICAL WAVEGUIDES;

EID: 41549086506     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303066     Document Type: Conference Paper

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