Growth and characterization of langasite-type Ba3TaGa3Si2O14 single crystals

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2284-2287

  Zheng, Yanqing ^a   Xin, Jun ^a   Kong, Haikuan ^a   Chen, Hui ^a   Shi, Erwei ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

A1. Crystal structure; A1. Facet; A1. X ray diffraction; A2. Czochralski method; B1. Gallium compounds; B2. Piezoelectric materials

Indexed keywords

BARIUM COMPOUNDS; CHARACTERIZATION; CRYSTAL GROWTH FROM MELT; DEFECTS; PIEZOELECTRIC MATERIALS; RESONANCE; STOICHIOMETRY; X RAY POWDER DIFFRACTION;

GROWN CRYSTALS; GROWTH DEFECTS; LANGASITE; STOICHIOMETRIC MELT;

SINGLE CRYSTALS;

EID: 41449117657     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.035     Document Type: Article

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