Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2239-2243

  Fuchi, S ^a   Miyake, S ^a   Kawamura, S ^a   Lee, W S ^a   Ujihara, T ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

NANOSTRUCTURES; OPTICAL PROPERTIES; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM DOTS; VAPOR PHASE EPITAXY;

LOW DIMENSIONAL STRUCTURES; ORGANOMETALLIC VAPOR PHASE EPITAXY;

SEMICONDUCTOR MATERIALS;

EID: 41449092575     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.139     Document Type: Article

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