Electronic sputtering and desorption effects in TOF-SIMS studies using slow highly charged ions like Au 69+

Materials Science Forum

Volumn 248-249, Issue , 1997, Pages 413-417

  Schenkel, T ^a,b   Briere, M A ^a,c   Schmidt Bocking H ^b   Bethge, K ^b   Schneider, D ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b GOETHE UNIVERSITY   (Germany)

^c UNIVERSITY OF RHODE ISLAND   (United States)

Author keywords

Electronic Sputtering; Graphite; Highly Charged Ions; SiO2; Time of Flight SIMS

Indexed keywords

DESORPTION; GRAPHITE; ION BEAMS; SECONDARY ION MASS SPECTROMETRY; SILICA; SPUTTERING;

ELECTRONIC SPUTTERING; HIGHLY ORIENTED PYROLITHIC GRAPHITE (HOPG); TIME OF FLIGHT SECONDARY ION MASS SPECTROSCOPY (TOFSIMS);

SURFACE STRUCTURE;

EID: 4143148543     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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