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Volumn 239-241, Issue , 1997, Pages 11-14

Theoretical exploration of 29Si hyperfine and superhyperfine parameters of E' centers as a measure of range-II order in a-SiO2

Author keywords

Hyperfine Interactions; Point Defects; SiO2; Theory

Indexed keywords

AMORPHOUS MATERIALS; CALCULATIONS; CHEMICAL BONDS; ELECTRON SPIN RESONANCE SPECTROSCOPY; LATTICE CONSTANTS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; POINT DEFECTS; SILICA; STATISTICAL METHODS;

EID: 4143084966     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (4)

References (10)
  • 7
    • 0001866033 scopus 로고
    • edited by G. Lucovsky, S. T. Pantelides, and F. L. Galeener, Pergamon, New York
    • A. G. Revesz, and G. V. Gibbs, in The Physics of MOS Insulators, edited by G. Lucovsky, S. T. Pantelides, and F. L. Galeener, (Pergamon, New York, 1980), p. 92.
    • (1980) The Physics of MOS Insulators , pp. 92
    • Revesz, A.G.1    Gibbs, G.V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.