A new microwave plasma etching system using time modulation bias technology

Hitachi Review

Volumn 48, Issue 6, 1999, Pages 344-348

  Ogata, Toshihide ^a,b   Nakata, Kenji ^a   Ono, Tetsuo ^b,c  

^a Headquarters of Power and Industrial Systems   (Japan)

^b JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^c Kasado Development Center of Power and Industrial Systems   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SHADING EFFECTS; MICROWAVE PLASMA ETCHING SYSTEM; RADIO FREQUENCY; TIME MODULATION;

ADHESION; ANISOTROPY; COMPUTER SOFTWARE; ELECTRONS; MICROWAVES; SEMICONDUCTOR DEVICES;

PLASMA ETCHING;

EID: 4143082900     PISSN: 0018277X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (5)

1. Semiconductor Industry Association (SIA): The International Technology Roadmap for Semiconductors 1998 Update http://www.itrs.net/ntrs/publntrs.nsf.
2. K. Yoshioka, "Microwave Plasma Etching System for 300 mm Wafers," Denshi Zairyo (March 1998), p. 64.
3. Y. Kawasaki, "Dry Etching System," Hitachi Hyoron 71, No.5 (May 1989), pp.387-392, in Japanese.
4. T. Ogata, "Microwave Plasma Etching System 'M-500 Series'," Denshi Zairyo (March 1995), p.116.
5. H. Kawahara, "Multi-chamber Microwave Plasma Etching System," Hitachi Hyoron 79, No.10 (October 1997), pp. 795-798, in Japanese.