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Volumn , Issue , 2004, Pages 205-210

Build-in reliability analysis for circuit design in the nanometer technology era

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIER INJECTION (HCI); NANOMETER TECHNOLOGY ERA; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); POTENTIAL CIRCUIT FUNCTION;

EID: 4143069238     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (17)
  • 7
    • 0032633963 scopus 로고    scopus 로고
    • May
    • Toyoji Yamamoto, TED Vol46. pp921-926, No.5, May 1999
    • (1999) TED , vol.46 , Issue.5 , pp. 921-926
    • Yamamoto, T.1
  • 10
    • 2942639133 scopus 로고    scopus 로고
    • A drain avanlanche hot carrier lifetime model for n- And p-channel MOSFET's
    • N. Koike and K. Tatsuuma, "A Drain Avanlanche Hot Carrier Lifetime Model for n- and p-Channel MOSFET's," in Proc. IEEE IRPS, p. 86, 2002
    • (2002) Proc. IEEE IRPS , pp. 86
    • Koike, N.1    Tatsuuma, K.2
  • 12
    • 84945713471 scopus 로고
    • Hot-electron induced MOSFET degradation-model, monitor, improvement
    • Feb.
    • C. Hu, S. Tam, F. -C. Hsu, P. Ko, T. Chan, and K. Terrill, "Hot-electron induced MOSFET degradation-model, monitor, improvement," IEEE Trans. Electron Devices, vol. ED-32, pp. 375-385, Feb. 1985
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 375-385
    • Hu, C.1    Tam, S.2    Hsu, F.C.3    Ko, P.4    Chan, T.5    Terrill, K.6
  • 14
    • 0022739759 scopus 로고
    • A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress
    • T. Horiuchi, H. Mikoshiba, K. Nakamura, and K. Hamano, "A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress," IEEE Electron Device Letters, vol. EDL-7, p. 337, 1986
    • (1986) IEEE Electron Device Letters , vol.EDL-7 , pp. 337
    • Horiuchi, T.1    Mikoshiba, H.2    Nakamura, K.3    Hamano, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.