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Volumn 2793, Issue , 1996, Pages 230-240

Defect printability analysis in electron beam cell projection lithography

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; ELECTROOPTICAL EFFECTS; MASKS; PHOTOMASKS; PHOTORESISTS; X RAYS;

EID: 4143066598     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.245201     Document Type: Conference Paper
Times cited : (1)

References (8)
  • 1
    • 0000505521 scopus 로고
    • Electron-beam cell projection lithography: A new high-throughput electron-beam direct writing technology using a specially tailored si aperture
    • Y.Nakayama, S.Okazaki, N.Saitou and H.Wakabayashi, "Electron-beam cell projection lithography: A new high-throughput electron-beam direct writing technology using a specially tailored Si aperture, " J.Vac.Sci.Technol., B8 ' pp.1836-1840, 1990.
    • (1990) J.Vac.Sci.Technol , vol.B8 , pp. 1836-1840
    • Nakayama, Y.1    Okazaki, S.2    Saitou, N.3    Wakabayashi, H.4
  • 7
    • 31844447619 scopus 로고
    • High accurate calibration method of electron beam cell projection lithography
    • Y.Nakayama, Y.Sohda, N.Saitou and H.Itoh, "High accurate calibration method of electron beam cell projection lithography, " SPIE Vol. 1924, pp. 183-192, 1993.
    • (1993) Spie , vol.1924 , pp. 183-192
    • Nakayama, Y.1    Sohda, Y.2    Saitou, N.3    Itoh, H.4
  • 8
    • 0028754244 scopus 로고
    • Silicon shaping mask for electron-beam cell projection lithography
    • H Satoh, Y Nakayama, N.Saitou and T. Kagami, "Silicon shaping mask for electron-beam cell projection lithography, " SPIE Vol.2254, pp-122-132, 1994.
    • (1994) Spie , vol.2254 , pp. 132
    • Satoh, H.1    Nakayama, Y.2    Saitou, N.3    Kagami, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.