A novel remote reactive sink layer technique for the control of N and O concentrations in metal/high-k gate stacks

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 164-165

  Akasaka, Y ^a   Shiraishi, K ^b,c   Umezawa, N ^c   Ogawa, O ^a   Kasuya, T ^a   Chikyow, T ^c   Ootsuka, F ^a   Nara, Y ^a   Nakamura, K ^d  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ELECTRON MOBILITY; GATES (TRANSISTOR); MISFET DEVICES; OXYGEN;

GATE STACKS; INTERFACIAL TRAP DENSITY; REMOTE REACTIVE SINK LAYERS;

NITROGEN;

EID: 41149164810     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. V. Narayanan et al., VLSI Tech Dig., p192, 2004
2. C. Choi et al., VLSI Tech Dig., p.226, 2005
3. Y. Akasaka et al., VLSI Tech Dig., p.228, 2005