Performance enhancement in 45-nm ni fully-silicided gate/high-k CMIS using substrate ion implantation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 172-173

  Nishida, Y ^a   Yamashita, T ^a   Yamanari, S ^a   Higashi, M ^a   Shiga, K ^a   Murata, N ^a   Mizutani, M ^a   Inoue, M ^a   Sakashita, S ^a   Mori, K ^a   Yugami, J ^a   Hayashi, T ^a   Shimizu, A ^a   Oda, H ^a   Eimori, T ^a   Tsuchiya, O ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; FLUORINE; HAFNIUM COMPOUNDS; ION IMPLANTATION; NICKEL; PHASE CONTROL;

FLUORINE IMPLANTATION; PERFORMANCE ENHANCEMENT;

GATES (TRANSISTOR);

EID: 41149150822     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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