Technology breakthrough of body-tied FinFET for sub 50 nm NOR flash memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 90-91

  Cho, Eun Suk ^a   Kim, Tae Yong ^a   Cho, Byung Kyu ^a   Lee, Choong Ho ^a   Lee, Jong Jin ^a   Fayrushin, Albert ^a   Lee, Chul ^a   Park, Donggun ^a   Ryu, Byung Il ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FLASH MEMORY; LOGIC CIRCUITS; SEMICONDUCTOR DOPING;

DRAIN DISTURBANCE; FINFET DEVICES; NOR FLASH MEMORY;

FIELD EFFECT TRANSISTORS;

EID: 41149118556     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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