Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab

Chinese Physics Letters

Volumn 25, Issue 3, 2008, Pages 981-984

  Ren, Gang ^a   Zheng, Wan Hua ^a   Zhang, Ye Jin ^a   Xing, Ming Xin ^a   Wang, Ke ^a   Du, Xiao Yu ^a   Chen, Liang Hui ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; FINITE DIFFERENCE TIME DOMAIN METHOD; OPTICAL PUMPING; PHOSPHORUS COMPOUNDS; PHOTONIC CRYSTALS; Q FACTOR MEASUREMENT; SEMICONDUCTOR ALLOYS;

DUTY-CYCLE; INGAASP/INP; LASERING; LASING ACTION; LASING MODES; MODE CHARACTERISTICS; PHOTONIC CRYSTAL LASER; Q-FACTORS; THREE DIMENSIONAL FINITE DIFFERENCE TIME DOMAIN METHODS; TWO-DIMENSIONAL PHOTONIC CRYSTALS;

III-V SEMICONDUCTORS;

EID: 41149100651     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/3/048     Document Type: Article

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