A full adder design using serially connected single-layer magnetic tunnel junction elements

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 890-895

  Lee, Seungyeon ^a   Seo, Sunae ^b   Lee, Seungjun ^a   Shin, Hyungsoon ^a  

^a Ewha Womans University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Magnetic tunnel junction; Magnetoresistive devices; Nonvolatile logic device

Indexed keywords

ADDERS; BOOLEAN FUNCTIONS; MAGNETIC LOGIC DEVICES; MAGNETORESISTANCE;

MAGNETIC TUNNEL JUNCTION; MAGNETOLOGIC ELEMENTS; NONVOLATILE LOGIC DEVICE;

TUNNEL JUNCTIONS;

EID: 40949111946     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.914470     Document Type: Article

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